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Titlebook: Low Power and Reliable SRAM Memory Cell and Array Design; Koichiro Ishibashi,Kenichi Osada Book 2011 Springer-Verlag Berlin Heidelberg 201

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書目名稱Low Power and Reliable SRAM Memory Cell and Array Design
編輯Koichiro Ishibashi,Kenichi Osada
視頻videohttp://file.papertrans.cn/589/588806/588806.mp4
概述Basic book on memory design.Combines the aspects of SRAM technique, analysis and design.A valuable reference work for researchers and engineers alike.Includes supplementary material:
叢書名稱Springer Series in Advanced Microelectronics
圖書封面Titlebook: Low Power and Reliable SRAM Memory Cell and Array Design;  Koichiro Ishibashi,Kenichi Osada Book 2011 Springer-Verlag Berlin Heidelberg 201
描述Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
出版日期Book 2011
關(guān)鍵詞CMOS LSI; Memory cell; Reliability; SRAM; Study
版次1
doihttps://doi.org/10.1007/978-3-642-19568-6
isbn_softcover978-3-642-27018-5
isbn_ebook978-3-642-19568-6Series ISSN 1437-0387 Series E-ISSN 2197-6643
issn_series 1437-0387
copyrightSpringer-Verlag Berlin Heidelberg 2011
The information of publication is updating

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Low Power and Reliable SRAM Memory Cell and Array Design978-3-642-19568-6Series ISSN 1437-0387 Series E-ISSN 2197-6643
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Springer Series in Advanced Microelectronicshttp://image.papertrans.cn/l/image/588806.jpg
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Koichiro Ishibashirecognized he was often giving the ‘intellectual history’ of words, a ‘genealogy of sentiments’.. Combining the Renaissance demand that a dictionary be instructive with the Lockean theory of language left the dictionary as a book of books in a new sense; it became a record of the way previous books
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