Titlebook: Low Dielectric Constant Materials for IC Applications; Paul S. Ho,Jihperng Jim Leu,Wei William Lee Book 2003 Springer-Verlag Berlin Heidel

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expire

損壞

Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-, Materials,as the resistance of the wiring metals. For this reason, a great deal of effort has been spent in developing low dielectric constant (low-κ) materials that can reduce the parasitic capacitance of interconnects in ULSI circuits [.].

草率女

Integration of SiLK Semiconductor Dielectric,ning, and clean and metallization) required to produce an interconnect structure are discussed in detail. Special attention is given to the lithographic bene- fits that can be obtained when using SiLK semiconductor dielectric in the different schemes. Finally, a brief cost-of-ownership discussion is provided.

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Book 2003tant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about m

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1437-0387 terial: Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging

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Overview on Low Dielectric Constant Materials for IC Applications,actors for ultra-large-scale integration of integrated circuits. Materials with low dielectric constant are being developed to replace silicon dioxide as interlevel dielectrics. This chapter provides an overview on the basic issues of low-k dielectrics for interconnect applications and serves as a f

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Structure and Property Characterization of Low-, Dielectric Porous Thin Films Determined by X-Ray Rn scattering has been developed. The average pore size, pore connectivity, film thickness, wall or matrix density, coefficient of thermal expansion, and moisture uptake of nanoporous thin films with nonhomogeneous solid matrices can be measured. The measurements can be performed directly on films up