Titlebook: Laser interaction and related plasma phenomena, volume 3; Helmut J. Schwarz (Professor of Physics),Heinrich Book 1974 Springer-Verlag US

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Wayne G. Burwellernative is to use the (inherently nonlinear) capacitance formed by MOSFET gates. In Chapter 2, we focus on the use of MOS capacitors as integrating elements. A physics-based model which predicts distortion accurately is presented for a two-terminal MOS structure in accumulation. Distortion in these capacitor978-1-4757-8429-9978-0-306-47014-1

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R. T. Schneiderernative is to use the (inherently nonlinear) capacitance formed by MOSFET gates. In Chapter 2, we focus on the use of MOS capacitors as integrating elements. A physics-based model which predicts distortion accurately is presented for a two-terminal MOS structure in accumulation. Distortion in these capacitor978-1-4757-8429-9978-0-306-47014-1

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W. A. Proctor,G. H. Canavans to use the (inherently nonlinear) capacitance formed by MOSFET gates. In Chapter 2, we focus on the use of MOS capacitors as integrating elements. A physics-based model which predicts distortion accurately is presented for a two-terminal MOS structure in accumulation. Distortion in these capacitor