Titlebook: Kinetics of Ordering and Growth at Surfaces; Max G. Lagally Book 1990 Plenum Press, New York 1990 Surface science.crystal.kinetics

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Silicon Molecular Beam Epitaxye considered, using RHEED and STM. Ge-on-Si heteroepitaxy is discussed, including growth mode and lattice relaxation. Strained-layer superlattices have been fabricated by phase-locked epitaxy; analysis suggests that Ge./Si. has a direct band gap.