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Titlebook: Jungen – P?dagogik; Praxis und Theorie v Doro-Thea Chwalek,Miguel Diaz,Ulrike Graff Book 2013 Springer Fachmedien Wiesbaden 2013 Bildungsun

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31#
發(fā)表于 2025-3-26 23:56:48 | 只看該作者
ve been used in the area such as fuzzy knowledge-based systems that use fuzzy IF-THEN rules, ., which may incorporate fuzziness in data and programs, and fuzzy database systems in the field of medicine, economics, and management problems. It is exciting to note that some consumer electronic and auto
32#
發(fā)表于 2025-3-27 02:48:21 | 只看該作者
Jürgen Buddeools for feature selection; it puts the task of feature selection into the appropriate statistical perspective, and describes important tools such as hypothesis tests - which are of general use - and random probes, which are more specifically dedicated to feature selection. The use of hypothesis tes
33#
發(fā)表于 2025-3-27 05:47:06 | 只看該作者
34#
發(fā)表于 2025-3-27 11:24:58 | 只看該作者
Katharina Debus,Olaf Stuve, this multiresolution analysis makes signal denoising, compression, and feature extraction easier. In addition, the orthogonality property makes the inversion process easier and permits accurate reconstruction of the signal from wavelet coefficients. This is an important feature for applications li
35#
發(fā)表于 2025-3-27 14:14:15 | 只看該作者
36#
發(fā)表于 2025-3-27 17:47:21 | 只看該作者
37#
發(fā)表于 2025-3-28 00:15:40 | 只看該作者
Ulrike Graffand novel approaches. Even with today‘s advanced computer technologies, discovering knowledge from data can still be fiendishly hard due to the characteristics of the computer generated data. Feature extraction, construction and selection are a set of techniques that transform and simplify data so a
38#
發(fā)表于 2025-3-28 05:02:08 | 只看該作者
39#
發(fā)表于 2025-3-28 07:24:18 | 只看該作者
40#
發(fā)表于 2025-3-28 10:47:26 | 只看該作者
Marc Melcherlms during plasma etching. UV-induced damage in SiOC films was predicted in this study. Our prediction results of damage in SiOC films shows that UV spectra and their absolute intensities are the key cause of damage in SiOC films. In addition, UV-radiation damage in SiOC films strongly depends on th
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