Titlebook: Ion Implantation Techniques; Lectures given at th Heiner Ryssel,Hans Glawischnig Conference proceedings 1982 Springer-Verlag Berlin Heidelb

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功多汁水

Range Distributionsgiven by symmetrical Gaussian distributions. Experiments have shown, however, that profiles are skewed and possess tails, not only in crystalline semiconductors where channeling of ions may occur. These experimental findings are confirmed by numerical Monte Carlo simulations. Both theories can be ex

NEEDY

Electrical Measuring Techniquesimplanted impurities and their uniformity laterally across the sample. In addition, depth profiling methods will be considered as these can yield valuable information regarding the energy and purity of the ion beam. The techniques are discussed mainly with respect to measurements on implanted silico

Engaging

Wafer Mapping Techniques for Characterization of Ion Implantation Processingping non-uniformity of ion-implantation equipment. Examples are provided which illustrate the use of these techniques for establishing performance norms for production implantation equipment, for diagnosing equipment malfunctions and for characterizing phenomona such as wafer heating effects in high

慢慢流出

Non-Electrical Measuring Techniques implanted species, generally together with an evaluation of the damage produced by the ion bombardment. Thermal or beam annealing of implanted samples.results in a rearrangement of the impurity and host-material configuration via diffusion and lattice reconstruction. Following a short review of the

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Evolution and Performance of the Nova NV-ID Predep? Implanterrformance objectives and machine configuration were established in November 1978 and have not changed significantly since (see Section 2). However, the system and subsystem designs have evolved along the expected learning curve. Sixty systems have now been shipped and a pattern of actual performance

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