Titlebook: Ion Beam Modification of Solids; Ion-Solid Interactio Werner Wesch,Elke Wendler Book 2016 Springer International Publishing Switzerland 201

Amendment

強(qiáng)行引入

Swift Heavy Ion Irradiation of Amorphous Semiconductorson in selected amorphous Group IV and III-V materials are summarized. Complementary molecular dynamics simulations provide additional understanding and in combination with experiment enables new mechanistic insight at the atomic scale.

Mhc-Molecule

槍支

Introduction

dowagers-hump

Ion-Solid Interactions, however, also some classical approaches are presented. For amorphous solids, mainly considered here, the binary collisions can be assumed to be statistically independent and the physical quantities (e.g. energy and angular distributions) are obtained by statistics. In the case of crystalline solids, only some special effects are described.

innate

SSRIS

小樣他閑聊

污穢

Primary Processes of Damage Formation in Semiconductorsd in a third group of materials amorphisation by ion implantation is not observed even not at low temperatures for moderate ion fluences which do not significantly alter the stoichiometry of the material. Various models are applied for describing the damage evolution. This represents a further step