Titlebook: Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology No; Guilei Wang Book 2019 Springer Natur

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Book 2019al growth, with a special focus on its patterndependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS..

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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology No

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https://doi.org/10.1007/978-981-15-0046-6SiGe; RPCVD; source/drain technology; selective epitaxy; technology nodes; strain; pattern dependency

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