Titlebook: Introduction to Semiconductor Physics and Devices; Mykhaylo Evstigneev Textbook 2022 The Editor(s) (if applicable) and The Author(s), unde

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Band Theory of Solidst Brillouin zone and the band gap are introduced and demonstrated on an example of a one-dimensional crystal. The difference between the phase and group velocity of an electron is explained. The band-theoretic distinction between the metals, insulators, and semiconductors is discussed. Finally, the

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Semiconductors in Equilibriumused to derive the mass action law. A distinction between the conductivity effective mass and the density of states effective mass is made. The concentration of charge carriers in an intrinsic semiconductor is obtained. The common method to control the type and concentration of charge carriers is by

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Carrier Transportniformity of the charge carrier concentration, and drift is induced by an electric field. The two mechanisms are quantified in terms of the flux density. The diffusion flux density is proportional to the concentration gradient, while the drift flux density is proportional to the product of the conce

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Metal–Semiconductor Contacthe semiconductor and metal work functions. Ohmic contacts are used to collect signal from a semiconductor device, while rectifying contacts are important in electronic applications. A standard method to investigate the properties of a metal-semiconductor contact is to measure its capacitance as a fu

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PN Junction Dioderriers from the two regions, a space-charge region is formed around the contact plane. The capacitance–voltage and the current–voltage curves of an ideal pn junction diode are obtained. The non-ideality effect on the current due to the recombination in the space-charge region is discussed.