Titlebook: Introduction to Applied Solid State Physics; Topics in the Applic Richard Dalven Book 1980 Springer Science+Business Media New York 1980 Tu

只看該作者 · 發(fā)表于 2025-3-23 19:27:02

https://doi.org/10.1007/978-1-4684-3674-7Tunnel diode; band structure; crystal; diffusion; electron; physics; resistance; semiconductor; semiconducto

只看該作者 · 發(fā)表于 2025-3-24 02:03:52

只看該作者 · 發(fā)表于 2025-3-24 05:50:13

978-1-4684-3676-1Springer Science+Business Media New York 1980

只看該作者 · 發(fā)表于 2025-3-24 08:49:18

只看該作者 · 發(fā)表于 2025-3-24 14:06:50

只看該作者 · 發(fā)表于 2025-3-24 15:04:38

只看該作者 · 發(fā)表于 2025-3-24 20:36:07

Physics of Metal-Semiconductor and Metal-Insulator-Semiconductor Junctions, the band diagram of an idealized MIS structure. The key result is the formation of an inversion layer at the insulator-semiconductor interface when an appropriate potential is applied. This result will be used in the next chapter to study two important devices, the induced-channel field-effect transistor and the charge-coupled device.

只看該作者 · 發(fā)表于 2025-3-25 00:54:20

		自動(dòng)登錄	找回密碼
密碼			To register

關(guān)于派博傳思			派博傳思旗下網(wǎng)站			友情鏈接
派博傳思介紹	公司地理位置	論文服務(wù)流程	影響因子官網(wǎng)	吾愛論文網(wǎng)	大講堂	北京大學(xué)	Oxford Uni.	Harvard Uni.
發(fā)展歷史沿革	期刊點(diǎn)評(píng)	投稿經(jīng)驗(yàn)總結(jié)	SCIENCEGARD	IMPACTFACTOR	派博系數(shù)	清華大學(xué)	Yale Uni.	Stanford Uni.
\|Archiver\|手機(jī)版\|小黑屋\| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-6 10:52
Copyright © 2001-2015 派博傳思京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved