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Titlebook: Intersubband Transitions in Quantum Wells; Emmanuel Rosencher,B?rge Vinter,Barry Levine Book 1992 Springer Science+Business Media New York

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發(fā)表于 2025-3-21 16:32:54 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Intersubband Transitions in Quantum Wells
編輯Emmanuel Rosencher,B?rge Vinter,Barry Levine
視頻videohttp://file.papertrans.cn/473/472905/472905.mp4
叢書名稱NATO Science Series B:
圖書封面Titlebook: Intersubband Transitions in Quantum Wells;  Emmanuel Rosencher,B?rge Vinter,Barry Levine Book 1992 Springer Science+Business Media New York
描述This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quan
出版日期Book 1992
關(guān)鍵詞Absorption; Energie; Epitaxy; Modulator; light scattering; nonlinear optics; optics; semiconductor; spectros
版次1
doihttps://doi.org/10.1007/978-1-4615-3346-7
isbn_softcover978-1-4613-6475-7
isbn_ebook978-1-4615-3346-7Series ISSN 0258-1221
issn_series 0258-1221
copyrightSpringer Science+Business Media New York 1992
The information of publication is updating

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Coupling of Radiation into Quantum Well Infrared Detectors by the Use of Reflection Gratings and Wavtwo-dimensional detector arrays.. Detectors with QWs of other material compositions like InAlAs/InGaAs and InGaAs/InP, have also been fabricated and show great promise. The QW infrared detector is basically of the photoconductive type, although detectors working in the photovoltaic mode have been demonstrated..
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Photon Drag IR-Detectors — the Doppler Effect in the Intersubband Resonance of 2-D Electron Systemshe Doppler-effect-induced drift of atoms, the so-called light induced drift (LID).. Because the photon drag effect (PDE) does not involve any charge separation, space charge regions or gradient-induced drift currents, the obvious advantages for photon drag detectors are their fast transient signal response and low impedance.
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Far-Infrared Emission and Absorption Spectroscopy of Quantum Wells and Superlatticesand optoelectronics, many of which are reviewed in this volume. The most obvious application, as an infrared photon detector,. has been discussed extensively in the literature. Other applications, for example in nonlinear optical devices,. begin to emerge.
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Book 1992France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is
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