Titlebook: Interfacial Aspects of Phase Transformations; Proceedings of the N Boyan Mutaftschiev Conference proceedings 1982 D. Reidel Publishing Comp

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The Structure of Clean Surfaces,lectrons E ? 15eV (minus mean inner potential), for neutrons and H atoms E ? 10meV,for He atoms E < 2meV. These conditions can be easily fulfilled as well as the coherency condition, which requires a sufficiently small monochromatic source.

不遵守

Crystal-Melt, Crystal-Amorphous and Liquid-Vapor Interfaces,or the case of the bulk liquids,.give information concerning the structure and thermodynamics of the crystal-melt interface such as:.The case of the crystal-glass and liquid-vapour interfaces is considered in the same way.

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捏造

Chemisorption of Metals on Metals and on Semiconductors,ical shorts, emission centers on fluorescent screens and other disturbances, and hot surfaces frequently tend to be contaminated by carbon. Nevertheless, a large amount of information has been accumulated of which only a small amount can be presented in the form of typical examples. For additional information see recent reviews. .

事與愿違

Surface Thermodynamics,in problems and results from other domains of the same discipline. Such a task requires a more or less unified approach to the topics considered which, if successfully applied, might also eliminate some intransigency of the different schools.

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Growth by Vacuum Evaporation, Sputtering, Molecular Beam Epitaxy and Chemical Vapor Deposition,the GaAs deposition process. Finally, the chemical vapor deposition of {100| GaAs in a Ga - AsC1. - H2 system and of {lll|Si from silane diluted in hydrogen at reduced pressures are analysed on the basis of surface reactions.