Titlebook: Interfaces, Quantum Wells, and Superlattices; C. Richard Leavens,Roger Taylor Book 19881st edition Plenum Press, New York 1988 Doping.Exci

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Infrared Excitations in Electronic Systems with Reduced Dimensionality, dimensionality. The classical example is the metal-oxide-semiconductor-field-effect-transistor (MOSFET) in which electrons can be confined at the semiconductor-oxide interface to form a quasi-two-dimensional electron system (2DES). Another more recently developed device is the high-electron-mobilit

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Electronic Structure of Laterally Restricted Systems,some of the methods being used to calculate energy levels and charge densities for such structures. No attempt is made to describe the growing body of theoretical and experimental work on optical and transport properties. A basic knowledge of heterostructure physics, as presented in other lectures i

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Electrons and Holes in Quantum Boxes,e the microscopic limit for very small, confined-eleetron systems. Bulk systems bounded by surfaces are the macroscopic limit for very large, confined-electron systems. The intermediate regime, where the crossover from atomic to bulk behavior occurs, is called the mesoscopic regime. Studies. of semi

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Electronic Excitations of Multi-Quantum-Well Structures,aterial are investigated corresponding to two-dimensional layers of electrons and alternating electron and hole layers, respectively. It is shown that when the substrate dielectric is included in the screened Coulomb potential energy between two point charges within the film the plasmon excitation s

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Many Body Effects on the Cyclotron Resonance in Electron Inversion Layers,on behave dynamically as a two dimensional electron gas.. This leads to interesting correlation effects for a number of reasons. The reduced dimensionality typically enhances the importance of potential or interaction energies relative to the kinetic energy. Also, it is possible to vary the two-dime

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Stark Shifts and Excitonic Effects in Semiconductor Quantum Wells and Superlattices,tices. These two topics have stimulated a significant amount of academic research. They are also at the heart of novel opto-electronic devices [1,2] (e.g. fast electro-optical modulators). For the first time the room temperature operation of some semiconductor devices is possible only due to the exi

Condescending

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Applications of Resonant Tunneling in Semiconductor Heterostructures,s, and their application to electronic devices. The first two lectures, published elsewhere ., were devoted to the physics of resonant tunneling and to fundamental topics of current interest. This part deals primarily with the implementation of those ideas into devices, with a short introductory rev

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Polaron Effects and Optic Phonon Scattering in Heterostructures,s we expect a strong interaction with the longitudinal optic (LO) phonon, through the electric field of the polarization wave. The interaction with transverse optic (TO) phonons will be less strong because of their smaller electric field, except at very low wavevector, q, where the electromagnetic c