Titlebook: Intelligent Computing Techniques for Smart Energy Systems; Proceedings of ICTSE Anshuman Tripathi,Amit Soni,Jagrati Sahariya Conference pro

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Comparative Analysis of 10T SRAM Cell using Nanodevices,-speed integrated circuits (ICs) leads to scaling the CMOS devices. The limitation of MOSFET scaling introduced the new transistor technology. The paper introduced the comparative analysis of 10T SRAM cell design using CMOS, FinFET, and CNTFET. Performance analysis is carried out by using power cons

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MULTI

Performance Analysis of Oxide Capacitance at Gate-Dielectric Variation in Surrounding-Gate MOSFET Stion operation. The analysis is based upon the resemblance of the device oxide capacitance in the device pinch-off. The capacitance formation at pinch-off cannot be considered a cylindrical parallel plate; therefore, the capacitance results differently from conventional computing of capacitance depe

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