Titlebook: Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation; 18th International W Lars Svensson,José Monte

語言學(xué)

友好關(guān)系

Forehead-Lift

Instinctive

Analysis of Effects of Input Arrival Time Variations on On-Chip Bus Power Consumptionpling power between neighboring bus lines has enlarged. The coupling power depends on not only signal transition type but also the relative signal transition time difference. For conventional dynamic power estimation, deterministic models of the time difference are assumed. We deal with nondetermini

財政

enumaerate

Mixed Radix-2 and High-Radix RNS Bases for Low-Power Multiplicationt. The proposed bases introduce moduli of the form 3., to the usual choice of moduli of the form 2., 2.???1, or 2.?+?1. It is found that for particular dynamic ranges, the introduction of high-radix modulo-3. multipliers significantly improves the power×delay performance of residue multiplication, i

VOC

細胞

A Design Space Comparison of 6T and 8T SRAM Core-Cellsptimization framework. The influence of a bit-line column multiplexer (MUX) on the 8T design space is shown. We demonstrate that 6T and 8T cells show differing area scaling behavior across the whole design space. We identify points on the area-performance trade-off curves that bound regions where ei

minimal

Latched CMOS DRAM Sense Amplifier Yield Analysis and Optimization to analyze mismatch effects and to support design robustness concerning technology variations. The statistical mismatch of the SA is replaced by equivalent voltage sources. The switching delay between n- and p-sensing transistors of the SA is also analyzed. This approach supports yield consideratio

輕率的你

Understanding the Effect of Intradie Random Process Variations in Nanometer Domino Logicuits suffer from a 2X higher variability compared to static CMOS logic, which translates into a greater speed penalty. The main variability sources of Domino gates at the circuit level are identified and analyzed by means of simple circuit models and Monte Carlo simulations on a 90 nm CMOS technolog