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Titlebook: III-Nitride Based Light Emitting Diodes and Applications; Tae-Yeon Seong,Jung Han,Hadis Morko? Book 2017Latest edition Springer Nature Sin

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樓主: mortality
11#
發(fā)表于 2025-3-23 12:21:31 | 只看該作者
https://doi.org/10.1007/978-981-10-3755-9High Voltage LEDs; III-Nitride Based Semiconductors; Laser Diodes; Quantum efficiency; Solid State Light
12#
發(fā)表于 2025-3-23 15:07:34 | 只看該作者
0303-4216 on tunnel junction LEDs, green/yellow LEDs, and UV LEDs.Co-.The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultr
13#
發(fā)表于 2025-3-23 19:51:37 | 只看該作者
Book 2017Latest editionsubstrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs...Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitri
14#
發(fā)表于 2025-3-23 22:40:28 | 只看該作者
LEDs Based on Heteroepitaxial GaN on Si Substrates, intermediate layers, (ii) HT intermediate layers (ILs) and multilayers (MLs), and (iii) strained-layer superlattices (SLS) interlayers and their LED performances, respectively. We believe that GaN/Si LEDs with low prices will become important LEDs for general lighting in the near future.
15#
發(fā)表于 2025-3-24 04:31:07 | 只看該作者
Phosphors and White LED Packaging,e LEDs, are discussed in terms of their luminous efficacy, color rendering index, and color temperature. Finally, some issues on phosphors (materials searching, color tuning, particle size, and geometry) and white LEDs (packaging configurations and reliability assessments) are addressed.
16#
發(fā)表于 2025-3-24 08:27:14 | 只看該作者
Color Quality of White LEDs,S) as a design tool. The chapter also discusses luminous efficacy of radiation and the color characteristics used for single-color LEDs. Finally, future considerations on color quality for white LED developments are given.
17#
發(fā)表于 2025-3-24 13:49:26 | 只看該作者
III-Nitride Tunnel Junctions and Their Applications,e valence band, as shown in Fig.?8.1. As the conduction band on the n-side becomes biased higher in energy than the valence band, states are not available for electrons to tunnel into. As a result, the current decreases, leading to a characteristic . regime.
18#
發(fā)表于 2025-3-24 16:07:19 | 只看該作者
19#
發(fā)表于 2025-3-24 19:19:23 | 只看該作者
20#
發(fā)表于 2025-3-25 01:30:11 | 只看該作者
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