Titlebook: Hydrogen in Disordered and Amorphous Solids; Gust Bambakidis,Robert C. Bowman Book 1986 Springer Science+Business Media New York 1986 corr

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B. S. Berry,W. C. Pritchetplementation advice for many computational applications.Incl.Presenting an area of research that intersects with and integrates diverse disciplines, including molecular biology, applied informatics, and statistics, among others, .Bioinformatics for Omics Data: Methods and Protocols. collects contrib

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Elements of the Theory of Amorphous Semiconductorsquences of the various kinds of disorder for electronic states and energies at and near the band edges and in the gaps are discussed. The energy spectrum is divided into ranges according to the principal characteristics of the states and the spectrum, localized vs. extended, universal vs. nonunivers

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A CPA Description of the Electronic and Transport Properties of α-GeH, α-SiH and α-SiGeHe electronic properties of amorphous semiconductor hydrides..Basic quantities of interest include the density of electronic states, the optical absorption, and the DC and AC conductivities. The optical gap, as well as other quantities of interest are obtained as a function of hydrogen and semiconduc

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Hydrogen Distribution in Amorphous Silicon and Silicon Based AlloysB.H. are compared. Using a very low heating rate of 5°/min it is possible to resolve fine structure on the exodiffusion spectra. Three evolution processes are observed:.In addition it is possible to oberve very fine structure ‘puffing’ due to the release of molecular hydrogen at mid to high temperat

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Hydrogen Passivation of Polycrystalline Siliconhave all been shown to be amenable to hydrogen passivation. Using the EBIC technique, it has been shown that nearly all the recombination producing defects can be passivated down to depths of 10–20 μm and that passivation depths of several hundred microns can sometimes occur. A model is advanced whe

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The Influence of Hydrogen on the Defects and Instabilities in Hydrogenated Amorphous Siliconhydrogen is either directly or indirectly important include (1) the elimination of silicon dangling bonds, (2) the trapping of molecular hydrogen in voids and (3) the presence of optically-induced, reversible metastabilities in the optical and electronic properties.