Titlebook: Hydrogen in Crystalline Semiconductors; Stephen J. Pearton,James W. Corbett,Michael Stavol Book 1992 Springer-Verlag Berlin Heidelberg 199

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休息

憤憤不平

convert

The Microscopic Characteristics of Impurity-Hydrogen Complexes in III-V Semiconductors,ved from infrared-absorption data. At present, there is only one theoretical study of impurity-H complexes [6.4]. In this chapter, recent work on the IR absorption, configurations, and H motions for hydrogen-impurity complexes will be surveyed.

Excise

Diffusion of Hydrogen in Semiconductors,e, and the method of hydrogen insertion. For example, hydrogen appears to diffuse more rapidly under conditions of low hydrogen concentration such as acid etching or boiling in water, than it does under conditions of high hydrogen concentration. The most obvious example of the latter is during exposure to a hydrogen plasma.

小歌劇

Introduction,od of the middle and late nineteen eighties saw a tremendous amount of work performed on the properties of hydrogen in crystalline semiconductors such as Si, GaAs and related materials. It was soon established that atomic hydrogen passivates the electrical activity of both shallow acceptor and donor

Germinate

scrape

ear-canal

Shallow Impurity Passivation by Atomic Hydrogen,oth acceptors [4.1,2] and donors in Si, GaAs, GaP and AlGaAs, and has been observed for acceptors in Ge, CdTe, ZnTe and InP. It is likely therefore that this is a general effect, but it may be difficult to observe experimentally in some materials because of the unstable nature of the hydrogen-impuri

冬眠

Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy, impurities are, in most cases, not electrically active or paramagnetic. InfraRed (IR) absorption and Raman spectroscopy, however, have been especially effective for characterizing hydrogen related defects [5.1,2]. The vibration of the light H in complexes occurs at frequencies well above intrinsic