Titlebook: Husserl’s “Introductions to Phenomenology”; Interpretation and C William R. McKenna Book 1982 Martinus Nijhoff Publishers, The Hague 1982 E

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Book 2005er structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.