Titlebook: Hot Carrier Degradation in Semiconductor Devices; Tibor Grasser Book 2015 Springer International Publishing Switzerland 2015 Degradation o

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書(shū)目名稱Hot Carrier Degradation in Semiconductor Devices影響因子(影響力)




書(shū)目名稱Hot Carrier Degradation in Semiconductor Devices影響因子(影響力)學(xué)科排名




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書(shū)目名稱Hot Carrier Degradation in Semiconductor Devices年度引用學(xué)科排名




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書(shū)目名稱Hot Carrier Degradation in Semiconductor Devices讀者反饋學(xué)科排名

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From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradationus possible isotope effects provide context for a discussion of some qualitative aspects of the physics. Typical industry DC hot carrier stress models and their application to AC circuit models are described and motivated in that context.

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https://doi.org/10.1007/978-3-319-08994-2Degradation of Semiconductor Device Performance; Hot Carrier Degradation; Reliability Physics and Engi

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Jacopo Franco,Ben Kaczercal examples and guidelines, it will be of great interest to students and academics of supply chain management and procurement, as well as service supply chain managers looking for advanced strategies..978-3-031-68246-9978-3-031-68244-5

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Hot-Carrier Degradation in Decananometer CMOS Nodes: From an Energy-Driven to a Unified Current Degrs now cold-carrier (CC) damage results in a multiple-particle (MP) degradation process thermally activated under multivibration excitation of the passivated dangling bonds at the interface. Next, we finally develop a complete modeling for NMOS and PMOS devices that is transferred from DC acceleratin

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Physics-Based Modeling of Hot-Carrier Degradationkage and the strong localization of hot-carrier damage. Our model is linked and compared with other approaches to HCD simulations. Special attention is paid to the importance of the particular model ingredients, such as competing mechanisms of the Si–H bond dissociation, electron–electron scattering

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