Titlebook: High-Frequency GaN Electronic Devices; Patrick Fay,Debdeep Jena,Paul Maki Book 2020 Springer Nature Switzerland AG 2020 Gallium Nitride El

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Hugo O. Condori Quispe,Berardi Sensale-Rodriguez,Patrick Fayof developed algorithms. The developed technique is applied to two types of blind experimental data, which are collected both in a laboratory and in the field. The result for the blind backscattering experimental data collected in the field addresses a real world problem of imaging of shallow explosives.978-1-4899-9530-8978-1-4419-7805-9

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Shubhendu Bhardwaj,John Volakisof developed algorithms. The developed technique is applied to two types of blind experimental data, which are collected both in a laboratory and in the field. The result for the blind backscattering experimental data collected in the field addresses a real world problem of imaging of shallow explosives.978-1-4899-9530-8978-1-4419-7805-9

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Jimy Encomendero,Debdeep Jena,Huili Grace Xingof developed algorithms. The developed technique is applied to two types of blind experimental data, which are collected both in a laboratory and in the field. The result for the blind backscattering experimental data collected in the field addresses a real world problem of imaging of shallow explosives.978-1-4899-9530-8978-1-4419-7805-9

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,High Power High Frequency Transistors: A Material’s Perspective,ncy performance of a material system. Care must be taken when predicting performance based only on Johnson’s figure of merit as many parameters not considered by it can significantly impact performance. This chapter takes a closer look at key material parameters that should be considered when predic

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Isotope Engineering of GaN for Boosting Transistor Speeds,ring. In GaN electronic devices, the saturation velocity gets reduced when the carrier concentration is increased which makes difficult to achieve simultaneous high-power and high-frequency operation. In this chapter, we develop a theory of electron transport in the presence of strong electron-phono

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Plasma-Wave Propagation in GaN and Its Applications,tz detectors and sources. Electron plasma waves are generated when electrons in the channel of a transistor are not able to follow high-frequency oscillations and lag behind. This introduces a delay or phase shift manifested as an inductive behavior, the so-called kinetic inductance. This electron i