Titlebook: High-Frequency Bipolar Transistors; Michael Reisch Book 2003 Springer-Verlag Berlin Heidelberg 2003 CMOS.Modulation.bipolar junction trans

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書目名稱High-Frequency Bipolar Transistors影響因子(影響力)




書目名稱High-Frequency Bipolar Transistors影響因子(影響力)學(xué)科排名




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書目名稱High-Frequency Bipolar Transistors網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱High-Frequency Bipolar Transistors被引頻次




書目名稱High-Frequency Bipolar Transistors被引頻次學(xué)科排名




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書目名稱High-Frequency Bipolar Transistors年度引用學(xué)科排名




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書目名稱High-Frequency Bipolar Transistors讀者反饋學(xué)科排名

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Physics and Modeling of Heterojunction Bipolar Transistorshe emitter region, without losing too much current gain. This is of great importance for the realization of high-frequency bipolar transistors, since the extremely thin base widths of these devices require large doping concentrations in order to obtain reasonable values of base resistance and punchthrough voltage.

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Physics and Modeling of Bipolar Junction Transistorspact models. On the basis of these results, the most prominent compact models for large-signal and small-signal operation will be considered, together with a presentation of parameter extraction procedures.

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Book 2003s of capital letters are written here as one capital letter with the rest in the form of a subscript (e.g. XCJC is used here instead of the XCJC used in the SPICE input). Concerning the use of lower-case and capital letters, the following rules are applied: ? Time-dependent large-signal quantities a

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them. The proposed techniques apply to both combinational and sequential circuits and to circuits that contain a mix of control and datapath logic. In many applications, the degree of resilience often varies depending on the application context or the dataset being processed. In such cases, it is de

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