| 書目名稱 | Hf-Based High-k Dielectrics |
| 副標題 | Process Development, |
| 編輯 | Young-Hee Kim,Jack C. Lee |
| 視頻video | http://file.papertrans.cn/427/426083/426083.mp4 |
| 叢書名稱 | Synthesis Lectures on Solid State Materials and Devices |
| 圖書封面 |  |
| 描述 | In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru–Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices. |
| 出版日期 | Book 2005 |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-031-02552-5 |
| isbn_softcover | 978-3-031-01424-6 |
| isbn_ebook | 978-3-031-02552-5Series ISSN 1932-1260 Series E-ISSN 1932-1724 |
| issn_series | 1932-1260 |
| copyright | Springer Nature Switzerland AG 2005 |
|Archiver|手機版|小黑屋|
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