Titlebook: Heavily Doped Semiconductors; Victor I. Fistul’ Book 1969 Springer Science+Business Media New York 1969 Doping.crystal.electron.growth.pap

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Optical Properties of Heavily Doped Semiconductors,esents the ratio of the intensities of the transmitted J and incident J. light, while R on the right-hand side represents the coefficient for a single reflection from the surface of a sample of thickness d.

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Behavior of Impurities in Heavily Doped Semiconductors,large distances so that the interaction between them can be neglected, at least in the first approximation. In the heavy doping case, we must allow for the interaction between the impurities themselves, between the impurities and the host atoms, and between the impurities and the structure defects.

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Preparation of Heavily Doped Semiconductors,ion process; they are affected also by the growth conditions. The latter may depend strongly on the apparatus used. Moreover, the nature and concentration of the dopant may affect considerably the process of growth and the properties of an ingot. The latter two factors are particularly important in

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Some Applications of Heavily Doped Semiconductors, cm?3. The free-carrier density in such materials has been of the same order or even less. The relative positions of the Fermi level and of the band edges in such semiconductors are shown in Fig. 7.1. The energy structure of p—n junctions (under thermodynamic equilibrium conditions) formed in such c

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range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma- tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of p

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