Titlebook: Handbook of Spintronics; Yongbing Xu,David D. Awschalom,Junsaku Nitta Living reference work 20200th edition

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,III–V Based Magnetic Semiconductors,e technology of semiconductors. Over the past 20 years, the research of (Ga,Mn)As has led to a deeper understanding of previously known spintronics phenomena, to discoveries of new effects, and to demonstrations of unprecedented functionalities of experimental spintronics devices with general applic

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Low-Dimensional Molecular Magnets and Spintronics,as single molecule magnets (SMMs) and single chain magnets (SCMs) can potentially be used as spin carriers in spintronic devices, and hence have attracted considerable interest. By using different bridging ligands, a number of compounds showing SMM or SCM behaviors have been reported. Due to the lim

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,Magnetic III–V Semiconductor-Based Hybrid Structures,rated huge impact to the mass data storage industries. The second generation spintronics based on magnetic-semiconductor hybrid structures aims to develop new spin based devices such as spin transistors and spin logic, which will not just improve the existing capabilities of electronic transistors,

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Magnetic Nanoparticles and Granular Thin Films,antum dots), nanorods, nanowires, thin films, and bulk materials made of nanoscale building blocks or consist of nanoscale structures. The properties of nanostructured materials are so different from those of the bulk counterparts, especially in terms of magnetism. In this part, we will introduce yo

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Magnetic Oxide Semiconductors,etc., if we dope Mn plus a certain concentration of holes into these systems. The magnetic ordering in those compounds was suggested to originate from the Ruderman–Kittel–Kasuya–Yoshida interaction of localized moments of dopants via 2. holes or 4. electrons. Inspired by this idea, many experimental

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Magnetic Tunnel Junctions and Their Applications in Nonvolatile Circuits,ce (TMR) values for readout and the possibility to electrically write information into the devices. This chapter focuses on evaluating the performance, challenges, and design parameters of MTJ devices for nonvolatile circuits. The reading, writing, and storing functions are evaluated under the light

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Magnetotransport Behaviors of (Ga,Mn)As-Based Nanostructures and Devices,ds of extraordinary spintronic functionalities have been realized based on this kind of material. However, increasing the Curie temperature (..) of (Ga,Mn)As above room temperature is a necessity for potential applications. In this chapter, an overview of several ways used recently to increase .. wi