Titlebook: Handbook of Advanced Plasma Processing Techniques; Randy J. Shul,Stephen J. Pearton Book 2000 Springer-Verlag Berlin Heidelberg 2000 Plasm

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Dry Etching of InP Vias, the backside of the wafer [.–.]. MMICs are commonly fabricated on GaAs or InP substrates as these materials have advantages for high speed operation. Figure 13.1 shows a typical via hole structure for backside wafer contacts. These vias provide a common ground and a low inductance path from the sou

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Device Damage During Low Temperature High-Density Plasma Chemical Vapor Deposition,he move to high-density plasma reactors [.–.]. Conversely there has been little work on the effects of ion damage or hydrogen passivation occurring during high-density plasma deposition [.–.]. There are numerous steps during III-V device fabrication where either SiO. or SiN. is deposited as a mask o

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Dry Etching of Magnetic Materials,ape drives [.–.]. Information is written and stored as magnetization patterns on a recording media, and can be transferred back and forth using a magnetic sense head. In addition, magnetic random access memories (MRAM) are used for storage and processing of very high bit densities. These devices off