Titlebook: HEMT Technology and Applications; Trupti Ranjan Lenka,Hieu Pham Trung Nguyen Book 2023 The Editor(s) (if applicable) and The Author(s), un

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The Genesis of Simulation in Dynamicslay a major role in power electronic applications for fail-safe operation. However, due to the formation of two-dimensional electron gas (2DEG), these devices operate in depletion mode and the realization of normally off MOSHEMT has become a challenge among the researchers. In this chapter, first at

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https://doi.org/10.1007/978-1-4899-2067-6ng applications like high power, high frequency, high reliability in switching speeds, etc. This device became most promising due to its matchless properties over the conventional technologies which use Si-based materials, specifically with their impressive electrical management features demonstrati

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https://doi.org/10.1007/b138242h-speed circuits and high power requirements. These devices are finding special interest to replace conventional field-effect transistors having outstanding performance in the domain of high-frequency applications. In HEMT, the high mobility of electrons and highly confined characteristics of the tw

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The Genetic Mechanism and the Origin of Life RF and high power Applications. The strong bonding nature of such III–V binary and ternary compounds ensures robustness to ionizing radiations for Space Electronics. In this regard, GaN has established itself as the dominating material for fulfilling the needs of future RF and high power applicatio

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Kenro Kusumi,Sally L. Dunwoodieder derivatives of transconductance, output-conductance (.), intrinsic-gain (dB), gate-source capacitance (.), gate-drain capacitance (.), transconductance-generation factor (TGF), transconductance-frequency product (.), 1-dB compression-point, extrapolated input voltages (VIP. and VIP.), third-orde

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https://doi.org/10.1007/978-1-4419-1406-4ion, multifunction, and miniaturization. ISFET’s based sensor has been processed for the very same as they deliver faster response, higher sensitivity, higher resolution, and label-free detection. The major drawback of these types of sensors it lacks because of its material degradation of the gate i

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Breakdown Mechanisms and Scaling Technologies of AlGaN/GaN HEMTs,ts a brief overview of various factors, which cause an early breakdown in AlGaN/GaN HEMT at high drain voltage. The chapter also covers technological advancements proposed so far by various research groups to enhance the breakdown voltage of the device. Further, scaling technologies are discussed to