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Gas-Phase Growth Kinetics and Morphology of Lead and Germanium Telluride Crystals,ntrolled production of crystals with a given composition and the required properties. Crystal growth is investigated using both kinetic and morphologic principles. The former relates the growth rate to the experimental conditions (temperature, source material composition, vapor composition and press

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Growth and Structure of Si Epilayers on Porous Si,pecially after converting the three-layer system into a Si-on-insulator structure via oxidation of the porous sublayer [1-8]. Anodic etching regimes enabling the surface layer of p+-type Si to be converted into a porous material with a significant pore volume are known. The physical properties of po

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Effect of Crystallographic Orientation of the Interface on the Growth of Perfect Epitaxial Layers oe misfit parameters are relieved [1]. These stresses are related to the fact that the Burgers vectors of similar misfit dislocations (MDs) have screw components [2, 3]. The LSSs can influence the microstructure of the epitaxial layer and should be considered when choosing the growth conditions. The

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Self-Sustained Nuclei-Assisted Explosive Crystallization,rol the process increase with increasing temperature. Thus, the amorphous phase converts to the crystalline one faster as the release rate of latent heat of crystallization increases (a system with a positive feedback). As a result, explosive crystallization can occur in which the conversion rate ju

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