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Recent Development Trends in Thin Film Electroluminescent Displaysunds. The thin film electroluminescent structure, schematically shown in fig. 1, is almost ideal for a flat panel display. Light is generated in a less than 2 μm thick thin film stack, which is deposited on a glass substrate. The light emitting film is deposited between two insulating films, and the

CAND

拋媚眼

Blue Electroluminescent Devices Based on Low Resistive p-Type ZnSeort agents. The ZnSe layers exhibited a p-type conductivity up to 50 (Ωcm). and a net carrier concentration of 4×10. cm. together with a Hall mobility of 100 cm. /Vs at room temperature. These values are the highest ones reported so far.

averse

Prospects for II-VI Heterojunction Light Emitting Diodesy, which is the subject of this paper, is to join a p-type II–VI to an n-type II–VI to form a heterojunction (HJ). The HJ approach has been tried for over 20 years and has been quite successful in making pn junctions in these materials.

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Homocystinuria

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The Growth of Thin Layers by MOCVD of Wide Band Gap II-VI Compounds elements (O, S, Se, Te) has been recognised for a long time.. These materials are known to have band gaps which are compatible with emission in the visible region of the electromagnetic spectrum and to exhibit non-linear optical effects.. These properties are currently being investigated in applica

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Optical Studies of ZnXTe(X=Mn,Hg) Alloysct fundamental transition. Many different ternary and quaternary solid solutions based upon ZnTe are prepared by alloying with another II–VI compound like CdTe, CdSe, HgTe... or with a VI–VII material like MnSe or MnTe. In the present paper, we shall focus particularly on the ternary alloys Hg. Zn.

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