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Summary and Remarks,, including 0D silicon quantum dots, 1D silicon nanowires, and 2D silicon sheet, for their growth mechanism, structural stability, chemical stability, excited state property, and energy band structure engineering.

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Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations978-3-642-40905-9Series ISSN 2191-5407 Series E-ISSN 2191-5415

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Stability of Silicon Nanostructures,on largely deviated from four of bulk materials. As such, numerous possible pristine silicon nanostructures including nanospheres and nanowires have been proposed in the literature, including the thinnest silicon nanowire proposed by us. Tubular silicon nanostructures are difficult to form, as revea

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Planung und Kontrolle von Kosten und Gewinn synthesized but also its interesting and novel mechanism. It has been revealed by our theoretical calculations that it is the silicon suboxide clusters which possess high reactivity on their surface silicon sites that facilitate the nucleation and growth of silicon nanostructures by allowing them t

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