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書目名稱Grain Boundary Controlled Properties of Fine Ceramics影響因子(影響力)




書目名稱Grain Boundary Controlled Properties of Fine Ceramics影響因子(影響力)學(xué)科排名




書目名稱Grain Boundary Controlled Properties of Fine Ceramics網(wǎng)絡(luò)公開度




書目名稱Grain Boundary Controlled Properties of Fine Ceramics網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Grain Boundary Controlled Properties of Fine Ceramics被引頻次




書目名稱Grain Boundary Controlled Properties of Fine Ceramics被引頻次學(xué)科排名




書目名稱Grain Boundary Controlled Properties of Fine Ceramics年度引用




書目名稱Grain Boundary Controlled Properties of Fine Ceramics年度引用學(xué)科排名




書目名稱Grain Boundary Controlled Properties of Fine Ceramics讀者反饋




書目名稱Grain Boundary Controlled Properties of Fine Ceramics讀者反饋學(xué)科排名

含沙射影

Phagozyten und antigenpr?sentierende Zellenrature and 1070 K. Crack deflection and healing at grain boundaries were observed at 1070 K. Dislocations were generated at crack tips in grains at both temperatures. The strain contour line around the crack tips periodically oscillated during crack propagation, which was explained by the generation of periodic dislocations.

催眠

Morphine

GEN

Armada

Discontinuous Grain Growth and the Grain Boundary in a Solid-Solid Reaction Growth Method for Ferrits of joining a polycrystal with a single crystal seed and heating the joined body. Homogeneous single crystals are obtained readily. In this method, it is very important to control grain boundary phenomena such as discontinuous grain growth, grain size, pores, and impurities. In this paper, the rela

Armada

Thermal Properties of AlN Sintered at Lower Temperature with Additiveseramics at lower temperature for energy conservation. Sintering additives, such as CaO, CaF., Y.O., and YF., are essential components for the densification of A1N and to obtain higher thermal conductivity. Y.O. and YF. were investigated as sintering additives at 1600 °C and 1800 °C. The additives YF

SHOCK

Recent Developments in Understanding Grain-Boundary Electric and Dielectric Properties of PTCR Bariu conductance. In the current-voltage (IV) study, the electrodes showed a linear IV behavior at low voltages and an exponential type of diode behavior at high voltages. This IV characteristic could be explained by an equivalent circuit which had a restrictive resistance (ohmic contact) in parallel wi

BADGE

Grain Boundary Properties of Oxygen Hot Isostatically Pressed Barium Strontium Titanate with Positivd Ba.Sr.TiO. was examined. Although no significant microstructural or density changes could be observed as a consequence of the O.-HIP annealing, the electrical resistivity characteristics changed markedly. The maximum resistivity was increased about 160 times and the temperature of maximum resistiv

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