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Titlebook: Giant Magnetoresistance (GMR) Sensors; From Basis to State- Candid Reig,Susana Cardoso,Subhas Chandra Mukhopad Book 2013 Springer-Verlag Be

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樓主: 搖尾乞憐
31#
發(fā)表于 2025-3-26 21:55:46 | 只看該作者
High-Spatial Resolution Giant Magnetoresistive Sensors - Part II: Application in Biomedicine,ction and estimation of magnetic fluid content density inside tumors. Experimental results showed that the proposed technique has a good potential to be implemented in hyperthermia therapy in the future.
32#
發(fā)表于 2025-3-27 03:08:21 | 只看該作者
Book 2013e Nobel Prize in Physics in 2007. Initially used in read heads of hard disk drives, and while disputing a piece of the market to the flash memories, GMR devices have broadened their range of usage by growing towards magnetic field sensing applications in a huge range of scenarios. Potential applicat
33#
發(fā)表于 2025-3-27 08:13:04 | 只看該作者
34#
發(fā)表于 2025-3-27 13:20:13 | 只看該作者
35#
發(fā)表于 2025-3-27 16:21:41 | 只看該作者
36#
發(fā)表于 2025-3-27 20:46:55 | 只看該作者
Tríona Hourigan,Ann Marcus-Quinnction and estimation of magnetic fluid content density inside tumors. Experimental results showed that the proposed technique has a good potential to be implemented in hyperthermia therapy in the future.
37#
發(fā)表于 2025-3-27 22:07:38 | 只看該作者
Alessia Bertolazzi,Albertina Prettooise and non magnetic noise will be discussed with their physical origin and their analytical or phenomenological expression. We will then present ways to design GMR and TMR sensors for noise reduction, depending on the applications targeted.
38#
發(fā)表于 2025-3-28 03:36:14 | 只看該作者
39#
發(fā)表于 2025-3-28 09:33:14 | 只看該作者
Noise in GMR and TMR Sensors,oise and non magnetic noise will be discussed with their physical origin and their analytical or phenomenological expression. We will then present ways to design GMR and TMR sensors for noise reduction, depending on the applications targeted.
40#
發(fā)表于 2025-3-28 14:16:03 | 只看該作者
Magnetoresistive Sensors for Surface Scanning,s on a commercial analysis tool are provided here. Examples obtained with real devices demonstrate how Scanning Magnetic Microscopy has become an established failure analysis technique for visualizing current paths in microelectronic devices.
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