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Titlebook: Gaseous Dielectrics VII; Loucas G. Christophorou,David R. James Book 1994 Springer Science+Business Media New York 1994 Plasma.cluster.dev

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書(shū)目名稱(chēng)Gaseous Dielectrics VII
編輯Loucas G. Christophorou,David R. James
視頻videohttp://file.papertrans.cn/381/380791/380791.mp4
圖書(shū)封面Titlebook: Gaseous Dielectrics VII; Loucas G. Christophorou,David R. James Book 1994 Springer Science+Business Media New York 1994 Plasma.cluster.dev
描述The Seventh International Symposium on Gaseous Dielectrics was held in Knoxville, Tennessee, U. S. A. , on April 24-28, 1994. The symposium continued the interdisciplinary character and comprehensive approach of the preceding six symposia. Gaseous DielecIries VII is a detailed record of the symposium proceedings. It covers recent advances and developments in a wide range of basic, applied and industrial areas of gaseous dielectrics. It is hoped that Gaseous DielecIries VII will aid future research and development in, and encourage wider industrial use of, gaseous dielectrics. The Organizing Committee of the Seventh International Symposium on Gaseous Dielectrics consisted of G. Addis (U. S. A. ), L. G. Christophorou (U. S. A. ), F. Y. Chu (Canada), A. H. Cookson (U. S. A. ), O. Farish (U. K. ), I. Gallimberti (Italy) , A. Garscadden (U. S. A. ), D. R. James (U. S. A. ), E. Marode (France), T. Nitta (Japan), W. Pfeiffer (Germany), Y. Qiu (China), I. Sauers (U. S. A. ), R. J. Van Brunt (U. S. A. ), and W. Zaengl (Switzerland). The local arrangements committee consisted of members of the Health Sciences Research Division and personnel of the Conference Office of the Oak Ridge National
出版日期Book 1994
關(guān)鍵詞Plasma; cluster; development; electrons; model; molecule
版次1
doihttps://doi.org/10.1007/978-1-4899-1295-4
isbn_softcover978-1-4899-1297-8
isbn_ebook978-1-4899-1295-4
copyrightSpringer Science+Business Media New York 1994
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Effect of Temperature on the Electron Attachment and Detachment Properties of c-C4F6mperature, T, range of 300 to 600 K and the mean electron energy, < ε >, range from 0.19 to 1.0 eV. The low-energy electron attachment rate constant for c-C.F. shows only a slight dependence on gas temperature. In contrast, the autodetachment frequency increases by more than four orders of magnitude
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Attachment of Low Energy Electrons to “Hot” SF6 Moleculesnge of 300 to 550 K and over a range of E/N values corresponding to mean electron energies, < ε >, ranging from 0.19 to 1.0 eV. As the gas temperature increases, the magnitude and energy dependence of k.(< ε >, T) remain unaffected. In the same T-range the collisionally stabilized SF.. is very stabl
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Ionization Processes in Fullerenes (C60/C70)beams. Structures in the low energy electron attachment cross section for .. occur from the near zero energy threshold all the way up to ～10eV. This behavior can be ascribed to angular momentum [?(?+1)/r.] barrier shape resonances (the electronic ground state of C. corresponds to ?=5). The long life
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Drift of Positive Ions in Methaneelectric field strength, E/N, was varied over the range 15.520×10. V cm.. The low-field mobilities of C.H.. and C.H.. scale very well according to the mass dependence of the polarisation-limit theory, but are 15?23% lower than their predicted absolute values. For CH.. and H.O., an additional lowerin
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