Titlebook: Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip; Pascal Meinerzhagen,Adam Teman,Alexander Fish Book 2018 Springer Internationa

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U. Kühl,M. Pauschinger,H.-P. Schultheissd 1-transistor-1-capacitor (1T-1C) eDRAM for reasons, such as high storage density, low bitcell leakage, logic compatibility, and suitability for two-port memories. The major drawbacks of GC-eDRAMs are their limited data retention times (RTs) and the large spread of RT across an array (Chun et al.,

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Sequential Steps of Emergency Airway Controlnhance the data retention time for operation at near-threshold voltage (NTV). First, a 3-transistor (3T) gain-cell (GC) using a full transmission gate (TG) write port is presented. This full TG 3T GC bitcell allows fast write operations as well as memory operation at a single supply voltage, whereas

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978-3-319-86855-4Springer International Publishing AG 2018

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https://doi.org/10.1007/978-3-319-60402-2Memory Systems; Memory for VLSI; embedded DRAM memory; embedded memory design; memory optimization; error

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Pascal Meinerzhagen,Adam Teman,Alexander FishProvides novel gain-cell embedded DRAM (GC-eDRAM) designs for various low-power VLSI SoC applications;.Models the statistical retention time distribution of GC-eDRAM and validates the model by silicon

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Targeted Therapies in Cancer Treatment,tems, are presented next. Finally, a short review of the state-of-the-art embedded memory technologies, including static random-access memory (SRAM) and embedded dynamic random-access memory (eDRAM), is provided, before closing the chapter with a book outline.