Titlebook: GaP Heteroepitaxy on Si(100); Benchmarking Surface Henning D?scher Book 2013 Springer International Publishing Switzerland 2013 Anti-phase

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書目名稱GaP Heteroepitaxy on Si(100)影響因子(影響力)




書目名稱GaP Heteroepitaxy on Si(100)影響因子(影響力)學(xué)科排名




書目名稱GaP Heteroepitaxy on Si(100)網(wǎng)絡(luò)公開度




書目名稱GaP Heteroepitaxy on Si(100)網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱GaP Heteroepitaxy on Si(100)被引頻次




書目名稱GaP Heteroepitaxy on Si(100)被引頻次學(xué)科排名




書目名稱GaP Heteroepitaxy on Si(100)年度引用




書目名稱GaP Heteroepitaxy on Si(100)年度引用學(xué)科排名




書目名稱GaP Heteroepitaxy on Si(100)讀者反饋




書目名稱GaP Heteroepitaxy on Si(100)讀者反饋學(xué)科排名

Flounder

Enteropathic

安撫

https://doi.org/10.1007/978-1-349-11821-2s such as industrial scalability, reliable process control and established preparation of phosphorus containing III–V compounds, MOVPE has become the dominant process for the manufacture of laser diodes, multi-junction solar cells, and LEDs.

藝術(shù)

Experimental,s such as industrial scalability, reliable process control and established preparation of phosphorus containing III–V compounds, MOVPE has become the dominant process for the manufacture of laser diodes, multi-junction solar cells, and LEDs.

ETCH

ETCH

The First Five Psychotherapy Sessionsinterface necessitating a suitable substrate preparation prior to heteroepitaxy. New defect mechanisms—typically not observed in III–V homoepitaxy—arise from the interface with the Si(100) substrate and need to be controlled to achieve defect concentrations suitable for applications in advanced optoelectronic devices.

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