| 書目名稱 | Fundamentals of Power Semiconductor Devices |
| 編輯 | B. Jayant Baliga |
| 視頻video | http://file.papertrans.cn/351/350482/350482.mp4 |
| 概述 | Provides extensive analytical formulations for design and analysis of structures.Includes numerical simulation examples to elucidate the operating physics and validate the models.Analyzes device perfo |
| 圖書封面 |  |
| 描述 | .Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. ?The treatment focuses on silicon devices?and?includes the ?unique attributes and design requirements for emerging silicon carbide devices.. |
| 出版日期 | Book 20081st edition |
| 關(guān)鍵詞 | Leistungsfeldeffekttransistor; Schottky rectifiers; Thyristor; Transistor; bipolar junction transistor; f |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-0-387-47314-7 |
| isbn_softcover | 978-1-4899-7765-6 |
| isbn_ebook | 978-0-387-47314-7 |
| copyright | Springer-Verlag US 2008 |
|Archiver|手機(jī)版|小黑屋|
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