| 書目名稱 | Ferroelectric-Gate Field Effect Transistor Memories |
| 副標(biāo)題 | Device Physics and A |
| 編輯 | Byung-Eun Park,Hiroshi Ishiwara,Sung-Min Yoon |
| 視頻video | http://file.papertrans.cn/343/342104/342104.mp4 |
| 概述 | raduate students of material science and electronic engineering, device and process engineers in industries.Offers a useful source of information for graduate students of material science and electron |
| 叢書名稱 | Topics in Applied Physics |
| 圖書封面 |  |
| 描述 | ..This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact...Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. ..This book aims to provide the readers with development history, technical issues, fabrication methodologies, a |
| 出版日期 | Book 2020Latest edition |
| 關(guān)鍵詞 | Ferroelectric-gate Field Effect Transistors; Field Effect Transistors with flexible; Inorganic Ferroel |
| 版次 | 2 |
| doi | https://doi.org/10.1007/978-981-15-1212-4 |
| isbn_softcover | 978-981-15-1214-8 |
| isbn_ebook | 978-981-15-1212-4Series ISSN 0303-4216 Series E-ISSN 1437-0859 |
| issn_series | 0303-4216 |
| copyright | Springer Nature Singapore Pte Ltd. 2020 |
|Archiver|手機版|小黑屋|
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