| 書(shū)目名稱 | Ferroelectric Memories |
| 編輯 | James F. Scott |
| 視頻video | http://file.papertrans.cn/343/342099/342099.mp4 |
| 概述 | State-of-the-art device designs are illustrated among the book‘s many figures..More than 500 up-to-date references and 76 problems for students make the book useful both as a research reference and as |
| 叢書(shū)名稱 | Springer Series in Advanced Microelectronics |
| 圖書(shū)封面 |  |
| 描述 | Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students. |
| 出版日期 | Book 2000 |
| 關(guān)鍵詞 | RAM; Random Access Memory; ceramics; ferroelectrics; memories; non-volatille; physics; thin films |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-662-04307-3 |
| isbn_softcover | 978-3-642-08565-9 |
| isbn_ebook | 978-3-662-04307-3Series ISSN 1437-0387 Series E-ISSN 2197-6643 |
| issn_series | 1437-0387 |
| copyright | Springer-Verlag Berlin Heidelberg 2000 |
|Archiver|手機(jī)版|小黑屋|
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