Titlebook: Extended Defects in Germanium; Fundamental and Tech Cor Claeys,Eddy Simoen Book 2009 Springer-Verlag Berlin Heidelberg 2009 Extended defect

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書目名稱Extended Defects in Germanium影響因子(影響力)




書目名稱Extended Defects in Germanium影響因子(影響力)學(xué)科排名




書目名稱Extended Defects in Germanium網(wǎng)絡(luò)公開度




書目名稱Extended Defects in Germanium網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Extended Defects in Germanium被引頻次




書目名稱Extended Defects in Germanium被引頻次學(xué)科排名




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書目名稱Extended Defects in Germanium讀者反饋




書目名稱Extended Defects in Germanium讀者反饋學(xué)科排名

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Sheung Ng,Kotaro Yoshida,Judith T. Zelikoff in covalent semiconductors [7,8]. The difference with a point-defect related deep level is that the energy position of the dislocation acceptor level shifts with its occupation due to the Coulomb repulsion between the electrons on the DB sites. At the same time the line charge induces a surrounding

的闡明

BRIEF

懶洋洋

柏樹

柏樹

Germanium-Based Substrate Defects,ted in different ways, and the best known is by epitaxial deposition. Recently, some other methods have been developed, like the Ge condensation technique or direct wafer bonding, resulting in a Ge (or Ge-rich) layer on an insulator substrate. Because of the high lattice mismatch between Ge and Si,

palpitate

群居動(dòng)物

exceptional