Titlebook: Exciton and Domain Luminescence of Semiconductors; N. G. Basov Book 1979 Consultants Bureau, New York 1979 crystal.diffusion.electron.scat

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書目名稱Exciton and Domain Luminescence of Semiconductors影響因子(影響力)




書目名稱Exciton and Domain Luminescence of Semiconductors影響因子(影響力)學(xué)科排名




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書目名稱Exciton and Domain Luminescence of Semiconductors網(wǎng)絡(luò)公開度學(xué)科排名




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書目名稱Exciton and Domain Luminescence of Semiconductors讀者反饋




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Anonymous

Domain Luminescence of Zinc Sulfide,construction of active and passive circuit elements capable of operating at high temperatures over a wide range of voltages and, especially, in the construction of sources and receivers of short-wavelength light. There is particular interest in sources in which electrical energy is converted directl

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Luminescence Excitation Spectrum for Excitation in the Region of Fundamental Absorption, and the Elthe region of the fundamental absorption. The band structure of crystals is usually studied in terms of the spectral variation of the reflection coefficient R. This method has many shortcomings, however. In the first place it involves laborious calculations, starting from the Kramers-Kronig relation

高原

Investigation of Condensation of Excitons in Germanium by Light-Scattering Method,r phase transition in a gas—liquid system. When the exciton density in the semiconductor exceeds a certain threshold value corresponding to the given temperature (for temperatures below the critical temperature), the excitons condense into “l(fā)iquid” droplets, the electrons and holes in which are coll

follicular-unit

The Theory of Ionization Domains. Generalization and Experimental Check,ove through the crystal only very slowly. Electrons traversing this double layer will be accelerated within it, and will impact-ionize all centers located within its confines. Under certain conditions, the layers of both positive and negative charge can be produced and sustained through this ionizat

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ted. The results of a study of the scattering of light by electron - hole drops in germanium are cited. The results are discussed on the basis of a theory of exciton condensation in which allowance is made for the diffusion of excitons toward the surface of the drops and for the surface tens ion of the electr978-1-4615-8575-6978-1-4615-8573-2

性行為放縱者

https://doi.org/10.1007/978-3-7091-8790-6ove through the crystal only very slowly. Electrons traversing this double layer will be accelerated within it, and will impact-ionize all centers located within its confines. Under certain conditions, the layers of both positive and negative charge can be produced and sustained through this ionizat

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