Titlebook: Erosion and Growth of Solids Stimulated by Atom and Ion Beams; G. Kiriakidis,G. Carter,J. L. Whitton Book 1986 Martinus Nijhoff Publishers

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Bubbles, Blisters, and Exfoliation, (see e.g. Carter et al. /1 /, G. Carter and J. Whitton, this conference). A second mechanism is due to the implantation of unsoluble gas ions, especially He, but also Ne, Ar, Kr, Xe, H, and N into the subsurface layers of a solid. It is the phenomena observed during gas ion implantation that this p

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Reactive Ion Etching of GaAs and Related III-V Compounds,le of ion bombardment and chemical reaction in dry etching of these compound semiconductors. Both high pressure (≥0.1 Torr) and low pressure (1–100 mTorr) experiments are outlined using the dark space DC bias voltage to characterize the etch. Surface analysis of etched GaAs and InP using AES, photol

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Ion Beam Enhanced Deposition and Dynamic Ion Mixing for Surface Modification, whose characteristics are interesting for the improvement of surface properties (wear-, corrosion-, thermal oxidation resistance) (1). One of the limiting factors for such treatments is the shallow thickness of the modified layer.

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