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Titlebook: Epitaxy of Nanostructures; Vitaly A. Shchukin,Nikolai N. Ledentsov,Dieter Bim Book 2004 Springer-Verlag Berlin Heidelberg 2004 Epitaxy.HTS

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樓主: Arthur
21#
發(fā)表于 2025-3-25 03:50:11 | 只看該作者
22#
發(fā)表于 2025-3-25 07:57:39 | 只看該作者
1434-4904 al trend in modern solid state physics and technology is to make things smaller. The size of key elements in modern devices approaches the nanometer scale, for both vertical and lateral dimensions. Ultrathin layers, or quantum wells, had already gained broad acceptance for applications in micro- and
23#
發(fā)表于 2025-3-25 13:26:32 | 只看該作者
Angeh?rigenpflege als Gesundheitsrisikoand communication technology has dramatically changed the world, significantly affecting all areas of human existence. This global technology is the driving force changing the industrial society into an information and knowledge-based society.
24#
發(fā)表于 2025-3-25 18:25:53 | 只看該作者
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發(fā)表于 2025-3-25 22:57:26 | 只看該作者
26#
發(fā)表于 2025-3-26 02:40:17 | 只看該作者
Growth and Characterization Techniques, are usually too large for these tiny things. Although some tools have been proposed to manipulate individual atoms brick by brick, as it were, e.g, by using a scanning probe microscopy (SPM) tip [2.1], these approaches seem to be far too expensive, and major success in nanofabrication has been achi
27#
發(fā)表于 2025-3-26 04:23:47 | 只看該作者
28#
發(fā)表于 2025-3-26 12:01:01 | 只看該作者
Engineering of Complex Nanostructures: Working Together with Nature,m wire and quantum dot (QD) structures with exciting physical properties and great potential for applications. It turns out, however, that merely exploiting natural phenomena is far from sufficient either for the physics or for the applications. We may mention just a few limitations:
29#
發(fā)表于 2025-3-26 15:26:08 | 只看該作者
Devices Based on Epitaxial Nanostructures, been to a large extent motivated and fueled by their potentially advantageous and unique device applications. Those in optical communications (lasers, optical amplifiers, photodetectors) and data processing and storage (single-electron devices) are based mainly on the fundamental properties of QD n
30#
發(fā)表于 2025-3-26 16:54:31 | 只看該作者
Book 2004e in the major paradigms of semiconductor physics and technology. This new approach in epitaxy enables fast parallel fabrication of large densities of quantum dots or wires for almost unlimited material combinations and has become the basis for a powerful new branch of nanotechnology. Quantum dots,
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