| 書(shū)目名稱 | Epitaxial Growth of III-Nitride Compounds |
| 副標(biāo)題 | Computational Approa |
| 編輯 | Takashi Matsuoka,Yoshihiro Kangawa |
| 視頻video | http://file.papertrans.cn/314/313362/313362.mp4 |
| 概述 | Addresses all theoretical/computational aspects of the growth of III-nitride in a single comprehensive work.Also discusses the underlying scientific principles.Illustrates how the amount of experiment |
| 叢書(shū)名稱 | Springer Series in Materials Science |
| 圖書(shū)封面 |  |
| 描述 | .This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.. |
| 出版日期 | Book 2018 |
| 關(guān)鍵詞 | Fundamental Growth Processes; III-Nitride Semiconductors; Dislocation Core Structure; Adsorption-Desorp |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-319-76641-6 |
| isbn_softcover | 978-3-030-09542-0 |
| isbn_ebook | 978-3-319-76641-6Series ISSN 0933-033X Series E-ISSN 2196-2812 |
| issn_series | 0933-033X |
| copyright | Springer International Publishing AG, part of Springer Nature 2018 |
|Archiver|手機(jī)版|小黑屋|
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