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Titlebook: Englisch für Elektroniker; Ein Lehr- und übungs Ariacutty Jayendran,Rajah Jayendran Textbook 1996 Friedr. Vieweg & Sohn Verlagsgesellschaft

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樓主: Coenzyme
31#
發(fā)表于 2025-3-27 00:52:47 | 只看該作者
https://doi.org/10.1007/978-981-16-9978-8ideo amplifier in a television receiver. A nonsinusoidal input signal is composed of many frequencies, and if the output is to be an exact replica of the input, then the following conditions must be satisfied.
32#
發(fā)表于 2025-3-27 02:24:20 | 只看該作者
me and the response of the transistor to changes in input voltages and currents is not instantaneous. The result is that there is a gradual decrease of the short-circuit current gain parameter at high frequencies. The equivalent circuit used to represent the high frequency behaviour of a transistor
33#
發(fā)表于 2025-3-27 05:20:26 | 只看該作者
34#
發(fā)表于 2025-3-27 09:55:39 | 只看該作者
https://doi.org/10.1007/978-3-319-23153-2 current. Among these are motor speed control, electrical welding, and lighting control. The use of silicon controlled rectifiers has made electrical power control an efficient and inexpensive process.
35#
發(fā)表于 2025-3-27 15:18:12 | 只看該作者
36#
發(fā)表于 2025-3-27 20:41:37 | 只看該作者
978-3-528-03839-7Friedr. Vieweg & Sohn Verlagsgesellschaft mbH, Braunschweig / Wiesbaden 1996
37#
發(fā)表于 2025-3-28 00:03:30 | 只看該作者
Overview: 978-3-528-03839-7978-3-322-84907-6
38#
發(fā)表于 2025-3-28 03:04:10 | 只看該作者
Viewegs Fachbücher der Technikhttp://image.papertrans.cn/e/image/311097.jpg
39#
發(fā)表于 2025-3-28 06:33:20 | 只看該作者
https://doi.org/10.1007/978-94-011-0741-9ity are termed good conductors and are usually metals. Materials which are poor conductors of electricity are called insulators. The third group consists of materials whose conductivities lie between those of metals and insulators. These materials which are called semiconductors play an important role in the field of electronics.
40#
發(fā)表于 2025-3-28 13:46:07 | 只看該作者
https://doi.org/10.1007/978-94-015-3171-9p, and are called emitter, base, and collector. The two possible types of transistor are shown in Fig 5.1 with their circuit symbols. The central region is very narrow in width, and has a much lower impurity concentration than the two outer regions.
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