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Titlebook: Energy-Level Control at Hybrid Inorganic/Organic Semiconductor Interfaces; Raphael Schlesinger Book 2017 Springer International Publishing

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發(fā)表于 2025-3-21 19:47:24 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Energy-Level Control at Hybrid Inorganic/Organic Semiconductor Interfaces
編輯Raphael Schlesinger
視頻videohttp://file.papertrans.cn/311/310585/310585.mp4
概述Nominated as an outstanding PhD thesis by the Humboldt-Universit?t zu Berlin, Germany.Demonstrates a method to achieve almost arbitrary adjustability of ZnO-organic energy-level alignment, paving the
叢書名稱Springer Theses
圖書封面Titlebook: Energy-Level Control at Hybrid Inorganic/Organic Semiconductor Interfaces;  Raphael Schlesinger Book 2017 Springer International Publishing
描述This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices..?.
出版日期Book 2017
關(guān)鍵詞Hybrid Inorganic Organic Systems HIOS; Zinc Oxide Organic Hybrid Semiconductor; Interface Energy-level
版次1
doihttps://doi.org/10.1007/978-3-319-46624-8
isbn_softcover978-3-319-83550-1
isbn_ebook978-3-319-46624-8Series ISSN 2190-5053 Series E-ISSN 2190-5061
issn_series 2190-5053
copyrightSpringer International Publishing AG, part of Springer Nature 2017
The information of publication is updating

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發(fā)表于 2025-3-21 23:10:26 | 只看該作者
2190-5053 roperties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices..?.978-3-319-83550-1978-3-319-46624-8Series ISSN 2190-5053 Series E-ISSN 2190-5061
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發(fā)表于 2025-3-22 01:52:07 | 只看該作者
Book 2017ignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices..?.
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發(fā)表于 2025-3-22 07:16:19 | 只看該作者
Introduction,efficiencies and new device concepts. Today, most devices are still completely based on inorganic semiconductor technology. But during the last three decades, the field of organic electronics has made a major leap forward after Tang et al.
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2190-5053 stability of ZnO-organic energy-level alignment, paving the This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignmen
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