Titlebook: Electronic Structure and Optical Properties of Semiconductors; Marvin L. Cohen,James R. Chelikowsky Textbook 1989Latest edition Springer-V

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書目名稱Electronic Structure and Optical Properties of Semiconductors影響因子(影響力)




書目名稱Electronic Structure and Optical Properties of Semiconductors影響因子(影響力)學(xué)科排名




書目名稱Electronic Structure and Optical Properties of Semiconductors網(wǎng)絡(luò)公開度




書目名稱Electronic Structure and Optical Properties of Semiconductors網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Electronic Structure and Optical Properties of Semiconductors被引頻次




書目名稱Electronic Structure and Optical Properties of Semiconductors被引頻次學(xué)科排名




書目名稱Electronic Structure and Optical Properties of Semiconductors年度引用




書目名稱Electronic Structure and Optical Properties of Semiconductors年度引用學(xué)科排名




書目名稱Electronic Structure and Optical Properties of Semiconductors讀者反饋




書目名稱Electronic Structure and Optical Properties of Semiconductors讀者反饋學(xué)科排名

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Meeting the Climate Change Challengee in the experimental reflectivity and modulated reflectivity for these materials than the corresponding III-V compounds. Typical materials in this group are ZnGeP. and CdSnAs.; these are the chalcopyrite analogs of GaP and InAs respectively.

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嘲弄

Diamond and Zinc-Blende Structure Semiconductors,liches are often trivializing in nature, the comparison here is not. The amount of data for silicon is immense; almost every conceivable probe has been applied to silicon with a concurrent analysis of theoretical predictions. Most of the theoretical results given in this chapter are from [8.1].

嘲弄

Nataliya Klimova,Oleg Kozyrev,Eduard Babkincompared with calculated density of states curves. The details and methods regarding the use of the measured spectra will be discussed elsewhere in this volume. Here we describe the theoretical calculations of the response functions.

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Yuri N. Toulouevski,Ilyaz Y. Zinurovfunction of x-rays is to probe the valence charge density of a semiconductor. The experimental determination of valence charge densities is difficult but not impossible, and some very good data exist for diamond and zinc-blende semiconductors. Finally, x-rays can be used to monitor temperature effects by studying Debye-Waller factors.

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