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Titlebook: Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures; J. M. Chamberlain,Laurence Eaves,Jean-Claude Porta Book

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書目名稱Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures
編輯J. M. Chamberlain,Laurence Eaves,Jean-Claude Porta
視頻videohttp://file.papertrans.cn/307/306385/306385.mp4
叢書名稱NATO Science Series B:
圖書封面Titlebook: Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures;  J. M. Chamberlain,Laurence Eaves,Jean-Claude Porta Book
描述This Advanced Study Institute on the Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures focussed on several of the most active areas in modern semiconductor physics. These included resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantised conductance and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Although the main emphasis was on fundamental physics, a series of supporting lectures described the underlying technology (Molecular Beam Epitaxy, Metallo-Organic Chemical Vapour Deposition, Electron Beam Lithography and other advanced processing technologies). Actual and potential applications of low dimensional structures in optoelectronic and high frequency devices were also discussed. The ASI took the form of a series of lectures of about fifty minutes‘ duration which were given by senior researchers from a wide range of countries. Most of the lectures are recorded in these Proceedings. The younger members of the Institute made the predominant contribution to the discussion sessions following each lecture and, in addition, provided most of the fifty-five papers that were
出版日期Book 1990
關鍵詞Potential; electrons; integrated circuit; modeling; quantum mechanics; scattering; transmission
版次1
doihttps://doi.org/10.1007/978-1-4684-7412-1
isbn_softcover978-1-4684-7414-5
isbn_ebook978-1-4684-7412-1Series ISSN 0258-1221
issn_series 0258-1221
copyrightSpringer Science+Business Media New York 1990
The information of publication is updating

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Grundlagen des zu entwickelnden Konzeptesies for carriers incident on the sample (Büttiker, 1986a; 1988a). It is transport in open conductors with current probes and voltage probes which is addressed. The formulation of resistances in terms of transmission of carriers through a conducting structure and reflection at the conductor stressing
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https://doi.org/10.1007/978-3-322-87248-7blem, the properties of confined electrons depend solely upon the volume containing them. In all real systems, however, the characteristics of the boundaries themselves play a significant role in the physics observed. Recent advances in epitaxial growth techniques now permit nearly ideal heterointer
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https://doi.org/10.1007/978-3-658-09661-8iscrete nature of the electron energy spectrum. When a weak one- or two-dimensional periodic potential is superimposed on the two-dimensional electron gas a novel type of oscillations occurs which reflects the commensurability of the relevant lengths in these systems — the cyclotron orbit diameter a
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Informationseffizienz auf Kapitalm?rktentions to electron systems of low dimensions, i.e., two-, one- and zero-dimensional systems (2DES, 1DES, 0DES), in particular grating coupler induced 2D plasmon resonances, intersubband resonances, minigaps and local plasmons in charge density modulated systems, dc transport and far infrared response
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Informationsgehalt von Credit Ratingsd by quantum mechanical phenomena. In particular, nanostructures on Si MOSFETs and GaAs MODFETs have shown modulations in their conductance versus gate voltage characteristics that have been attributed to quantum mechanical effects. In this paper, we review a modeling scheme which gives a unified wa
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