Titlebook: Electronic Processes on Semiconductor Surfaces during Chemisorption; T. Wolkenstein Book 1991 Consultants Bureau, New York 1991 Potential.

獨(dú)裁者

書目名稱Electronic Processes on Semiconductor Surfaces during Chemisorption影響因子(影響力)




書目名稱Electronic Processes on Semiconductor Surfaces during Chemisorption影響因子(影響力)學(xué)科排名




書目名稱Electronic Processes on Semiconductor Surfaces during Chemisorption網(wǎng)絡(luò)公開度




書目名稱Electronic Processes on Semiconductor Surfaces during Chemisorption網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Electronic Processes on Semiconductor Surfaces during Chemisorption被引頻次




書目名稱Electronic Processes on Semiconductor Surfaces during Chemisorption被引頻次學(xué)科排名




書目名稱Electronic Processes on Semiconductor Surfaces during Chemisorption年度引用




書目名稱Electronic Processes on Semiconductor Surfaces during Chemisorption年度引用學(xué)科排名




書目名稱Electronic Processes on Semiconductor Surfaces during Chemisorption讀者反饋




書目名稱Electronic Processes on Semiconductor Surfaces during Chemisorption讀者反饋學(xué)科排名

花爭吵

Cholecystokinin

Electron Transitions in Chemisorption,d state, may change the character of its bond with the surface, i.e., may change from a state with one type of bond to a state with another. These transitions indicate that there is localization or localization of a free electron or hole at the adsorbed particle or in its neighborhood (see Figs. 2.7

道學(xué)氣

The Interaction Of The Surface With The Bulk In A Semiconductor,number of surface properties, such as the chemisorptivity of the surface, the charge of the surface, and the reactivity of the chemisorbed partic1es, are determined, as we have seen, by the position of the Fermi level at the crystal surface. Here we will characterize the position of the Fermi level

Genetics

The Catalytic Effect of a Semiconductor,hemical reactions. Such typical semiconductors as cuprous oxide, zinc oxide, and vanadium pentoxide are at the same time typical catalysts. Semiconductors serve as catalysts for many chemical reactions, including oxidation and hydrogenation.

多山

Processes on a Real Surface,These deviations, which also arise both in adsorption kinetics and in adsorption equilibrium (non-Langmuir isotherms and the dependence of the differential adsorption heat on surface coverage), indicate the violation of one or more of the initial assumptions unnderlying Langmuir’s theory.

多山

COLON

Conclusion,s dealing with the interaction of an adsorbed particle with an adsorption center. Here both the electrons of the particles being adsorbed and those of the particle at which the adsorption takes place are involved. This group of problems is commonly known as the local interaction problem. But there a

rectum

HATCH