Titlebook: Electronic Materials; From Silicon to Orga L. S. Miller,J. B. Mullin Book 1991 Springer Science+Business Media New York 1991 electronic mat

清楚明確

書目名稱Electronic Materials影響因子(影響力)




書目名稱Electronic Materials影響因子(影響力)學(xué)科排名




書目名稱Electronic Materials網(wǎng)絡(luò)公開度




書目名稱Electronic Materials網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Electronic Materials被引頻次




書目名稱Electronic Materials被引頻次學(xué)科排名




書目名稱Electronic Materials年度引用




書目名稱Electronic Materials年度引用學(xué)科排名




書目名稱Electronic Materials讀者反饋




書目名稱Electronic Materials讀者反饋學(xué)科排名

混亂生活

Electron Energy Bands,ations of semiconductors is the fact that the electrons involved in the bonding (or in other allowed states) can generally be considered to occupy delocalized states. That is, the electrons cannot be associated with one particular atomic orbital; the electron states extend throughout the whole cryst

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Relinquish

Interfaces and Low-Dimensional Structures, this is a very good approximation since the dimensions of the materials we work with are generally large compared with the lattice spacing and the defects to the crystal periodicity few enough to be treated as perturbations. One area where these assumptions are not valid, however, is at the boundar

飛鏢

Key Optoelectronic Devices,ow to utilize more fully the extensive range of properties it offers. Optical fiber communications systems that begin to utilize the enormous bandwidth (10.–10. Hz) of light are now being installed worldwide, the energy of light is being harnessed by fabricating solar cells, and the power of light i

增減字母法

Thermodynamics and Defect Chemistry of Compound Semiconductors,set for the crystal grower for a number of reasons. Firstly, it enables one to determine the range of experimental conditions under which the required crystalline phase is the thermodynamically most stable phase. Secondly, where the purpose is to grow an alloy crystal (such as a ternary III-V compou

增減字母法

Single Crystal Growth I: Melt Growth,ometric or nearly so. The production of semiconductors in single-crystal form is a core requirement of almost all semiconductor device technology. As a consequence, the whole field of crystal growth technology is strongly device driven and sensitive to commercial pressures related to production effi

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archetype

Amorphous Silicon-Electronics into the 21st Century,ductors such as silicon. These developments were possible because the electrical conductivity of crystalline silicon can be controlled over many orders of magnitude by doping, that is, by the addition during growth of the crystal of small concentrations of impurities. However, there are a number of

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