Titlebook: Electronic Band Structure and Its Applications; Proceedings of the I M. Yussouff Conference proceedings 1987 Springer-Verlag Berlin Heidelb

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書(shū)目名稱(chēng)Electronic Band Structure and Its Applications影響因子(影響力)




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Armada

https://doi.org/10.1007/978-3-663-01367-9I shall illustrate this by picking three specific examples: broadening of the gap level associated with the defect, fractal character of the defect wave-function, and metastability of some defect centers.

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Erratum to: Quantitatives Denken also reported estimation of the field of forces on nearest metallic neighbours to the hydrogen atom. The associated field of displacement is more difficult to obtain because it relies on the unknown force constants of the alloys. The determination of these force contants remains an objective for the future.

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Dorsal

Deep defects in semiconductor alloys : Theoretical aspects,I shall illustrate this by picking three specific examples: broadening of the gap level associated with the defect, fractal character of the defect wave-function, and metastability of some defect centers.

Tortuous

https://doi.org/10.1057/978-1-137-57346-9 as well as large gap ionic compounds showed that the effects of local fields and dynamical screening are crucial for accurate results. With no empirical input, the calculated band gaps, optical transitions, and band dispersions are all within a few percent of experimental values.